Numerical analysis of SOI IGBT switching characteristics-switching speed enhancement by reducing the SOI thickness

Author

Omura, Ichiro ; Yasuhara, Norio ; Nakagawa, Akio ; Suzuki, Yoshie

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1993

fDate

18-20 May 1993

Firstpage

248

Lastpage

253

Abstract

The electrical characteristics of SOI (silicon-on-insulator) IGBTs (insulated-gate bipolar transistors), including breakdown voltage are discussed. It is found that the switching speed of an IGBT on a thin SOI is improved by reducing the SOI layer thickness without special design optimization. Carrier recombination at the Si-SiO₂ interface is shown to affect carriers as if the bulk lifetime were reduced for a thin SOI, thus further improving the switching speed of IGBTs on thin (2-μm) SOIs

Keywords

electric breakdown of solids; elemental semiconductors; insulated gate bipolar transistors; semiconductor-insulator boundaries; silicon; silicon compounds; SOI IGBT switching characteristics; SOI thickness; Si-SiO₂ interface; breakdown voltage; bulk lifetime; electrical characteristics; switching speed enhancement; Breakdown voltage; Cathodes; Conductivity; Diodes; Impurities; Insulated gate bipolar transistors; Numerical analysis; Power integrated circuits; Shape; Tail;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on

Conference_Location

Monterey, CA

ISSN

1063-6854

Print_ISBN

0-7803-1313-5

Type

conf

DOI

10.1109/ISPSD.1993.297131

Filename

297131