Influence of Simulation Parameters on the Bipolar Amplification in Fully-Depleted SOI Technologies under Heavy-Ion Irradiations

Author

Castellani-Coulié, K. ; Xia, M. ; Munteanu, D. ; Autran, J.L. ; Ferlet-Cavrois, V. ; Paillet, P. ; Baggio, J.

Author_Institution

CNRS, Marseille

fYear

2005

fDate

19-23 Sept. 2005

Abstract

The influence of simulation key parameters on the bipolar gain of SOI FD devices under irradiation is thoroughly investigated. The values of the track characteristics radius, carrier recombination lifetime or carrier mobility injected in simulation are found to seriously modify the bipolar gain magnitude, highlighting the importance of a fine tuning of these parameters to obtain accurate results with physical sense.

Keywords

MOSFET; amplification; bipolar transistors; carrier lifetime; electron mobility; electron-hole recombination; ion beam effects; silicon-on-insulator; Si; bipolar amplification; carrier mobility; carrier recombination lifetime; electron mobility; fully-depleted SOI MOSFET; heavy-ion irradiations; Circuit simulation; Electron mobility; Impact ionization; MOSFETs; Particle tracking; Radiation effects; Semiconductor films; Silicon; Single event upset; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on

Conference_Location

Cap d´Agde

ISSN

0379-6566

Print_ISBN

978-0-7803-9502-2

Electronic_ISBN

0379-6566

Type

conf

DOI

10.1109/RADECS.2005.4365607

Filename

4365607