High voltage bipolar mode SIT with low power loss

Author

Takagi, H. ; Kawauchi, Hikaru ; Yoshida, T. ; Miura, S. ; Ito, H. ; Tadano, H.

Author_Institution

Toyoda Automatic Loom Works Ltd., Aichi, Japan

fYear

1993

fDate

18-20 May 1993

Firstpage

276

Lastpage

280

Abstract

The characteristics of a novel 500-V, 200-A bipolar-mode SIT (static induction transistor) are reported. The sustaining voltage is the key aspect of the voltage capability under an inductive load switching; it can be improved without affecting the current gain or the switching speed. Reduction of the gate resistance is effective in raising the sustaining voltage. The current gain is improved by reducing the source aperture size. Double-layer metallization is adopted to increase effective area. An extremely low saturation voltage of 0.4 V and high current gain and high switching speed are achieved. The power loss of the SIT is 20% to 40% less than that of the IGBT (insulated-gate bipolar transistor) under 15-kHz switching

Keywords

field effect transistors; losses; metallisation; power transistors; 0.4 V; 15 kHz; 200 A; 500 V; bipolar mode SIT; current gain; double layer metallisation; gate resistance; inductive load switching; power loss; saturation voltage; source aperture size; static induction transistor; sustaining voltage; switching speed; voltage capability; Acoustic noise; Apertures; Boron; Circuits; Control systems; Frequency; Insulated gate bipolar transistors; Ion implantation; Low voltage; Power control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on

Conference_Location

Monterey, CA

ISSN

1063-6854

Print_ISBN

0-7803-1313-5

Type

conf

DOI

10.1109/ISPSD.1993.297137

Filename

297137