Title :
A high power IGBT module for traction motor drive
Author :
Mori, M. ; Saitou, R. ; Yatsuo, T.
Author_Institution :
Hitachi Ltd., Ibaraki, Japan
Abstract :
A 2000-V, 300-A insulated-gate bipolar transistor (IGBT) module consisting of six IGBT chips and two soft-and-fast recovery diode (SFD) chips has been fabricated for the inverter of a traction motor. The module structure and chip layout were designed to provide sufficient reliability and uniform operation among chips. The main electrical characteristics which were obtained from the tradeoff relations between on-state voltages and switching losses of 2000-V chips, namely, a saturation voltage of 3.5 V, a forward voltage of 2.7 V, and a typical turn-off time of 5 μs, are well suited to driving a motor at a high frequency
Keywords :
insulated gate bipolar transistors; invertors; modules; reliability; traction; 2.7 V; 2000 V; 3.5 V; 300 A; 5 mus; chip layout; electrical characteristics; forward voltage; high power IGBT module; inverter; module structure; on-state voltages; reliability; saturation voltage; soft-and-fast recovery diode; switching losses; traction motor; traction motor drive; turn-off time; Assembly; Insulated gate bipolar transistors; Inverters; Power semiconductor switches; Semiconductor diodes; Switching circuits; Switching loss; Testing; Traction motors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-1313-5
DOI :
10.1109/ISPSD.1993.297139
