Low-inductance module construction for high speed, high-current IGBT module suitable for electric vehicle application

Author

Tsunoda, Tetsujiro ; Matsuda, Tadashi ; Nakadaira, Yoshikuni ; Nakayama, Hirofumi ; Sasada, Yorimichi

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1993

fDate

18-20 May 1993

Firstpage

292

Lastpage

295

Abstract

A low-inductance IGBT (insulated-gate bipolar transistor) module construction is presented. Sufficiently low stray inductance in the module has been realized by adopting a multilayered DBC (direct bond copper) substrate, optimally designed terminals, and the optimum arrangement of terminals. This module construction has made possible high-speed and high-current switching operation with low overshoot voltage. A 600-V/400-A half-bridge circuit is constructed with about 80% of the package size for a conventional module. This module is particularly suitable for 40-50 kW electric vehicle applications

Keywords

electric vehicles; insulated gate bipolar transistors; modules; power electronics; 40 to 50 kW; 400 A; 600 V; IGBT module; direct bond copper; electric vehicle application; module construction; multilayered DBC; optimally designed terminals; overshoot voltage; stray inductance; switching operation; Bonding; Circuits; Copper; Electric vehicles; Inductance; Insulated gate bipolar transistors; Insulation; Low voltage; Modular construction; Packaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on

Conference_Location

Monterey, CA

ISSN

1063-6854

Print_ISBN

0-7803-1313-5

Type

conf

DOI

10.1109/ISPSD.1993.297140

Filename

297140