Title :
Low-inductance module construction for high speed, high-current IGBT module suitable for electric vehicle application
Author :
Tsunoda, Tetsujiro ; Matsuda, Tadashi ; Nakadaira, Yoshikuni ; Nakayama, Hirofumi ; Sasada, Yorimichi
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
A low-inductance IGBT (insulated-gate bipolar transistor) module construction is presented. Sufficiently low stray inductance in the module has been realized by adopting a multilayered DBC (direct bond copper) substrate, optimally designed terminals, and the optimum arrangement of terminals. This module construction has made possible high-speed and high-current switching operation with low overshoot voltage. A 600-V/400-A half-bridge circuit is constructed with about 80% of the package size for a conventional module. This module is particularly suitable for 40-50 kW electric vehicle applications
Keywords :
electric vehicles; insulated gate bipolar transistors; modules; power electronics; 40 to 50 kW; 400 A; 600 V; IGBT module; direct bond copper; electric vehicle application; module construction; multilayered DBC; optimally designed terminals; overshoot voltage; stray inductance; switching operation; Bonding; Circuits; Copper; Electric vehicles; Inductance; Insulated gate bipolar transistors; Insulation; Low voltage; Modular construction; Packaging;
Conference_Titel :
Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-1313-5
DOI :
10.1109/ISPSD.1993.297140
