DocumentCode :
1896028
Title :
Predicting hysteretic oscillations in over-temperature protection of a power IC using transient electrothermal circuit simulation
Author :
Williams, Richard K. ; Sevilla, Larry T. ; Rodamaker, Mark C.
Author_Institution :
Siliconix Inc., Santa Clara, CA, USA
fYear :
1993
fDate :
18-20 May 1993
Firstpage :
304
Lastpage :
309
Abstract :
A transient electrothermal circuit simulation methodology combining ANSYS transient FEA (finite element analysis) simulation (using active control elements) with steady-state SPICE simulations has been demonstrated. The hysteretic oscillation period of OTSD (over-temperature shutdown) protection circuitry in a power IC was accurately predicted over a power input range of 1.8 to 3.6 W and for periods ranging from 1.3 to 0.1 s, respectively. Simulation further showed that temperature gradients during cooling were small compared to those during heating transients. The peak junction temperature in the power IC studied was found to exhibit a 10 to 17°C overshoot at the shutdown limit, depending on the power input. Further studies suggest that on-chip thermal protection should be located within 50 μm of a dominant heat source to minimize the magnitude of this overshoot. The effects of ambient conditions on OTSD operation are shown to be greatest for low-power inputs resulting in long oscillation periods
Keywords :
SPICE; circuit analysis computing; digital simulation; finite element analysis; power integrated circuits; transient response; 0.1 to 1.3 S; 1.8 to 3.6 W; ANSYS transient FEA; active control elements; ambient conditions; dominant heat source; heating transients; hysteretic oscillations; on-chip thermal protection; oscillation periods; over-temperature protection; peak junction temperature; power IC; shutdown limit; steady-state SPICE simulations; temperature gradients; transient electrothermal circuit simulation; Analytical models; Circuit simulation; Electrothermal effects; Finite element methods; Hysteresis; Power integrated circuits; Protection; SPICE; Steady-state; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
Conference_Location :
Monterey, CA
ISSN :
1063-6854
Print_ISBN :
0-7803-1313-5
Type :
conf
DOI :
10.1109/ISPSD.1993.297143
Filename :
297143
Link To Document :
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