DocumentCode
1896040
Title
Survey and comparison of various sample preparation techniques for the heavy ions backside irradiation of COTS VLSI
Author
Courtade, Frédéric ; Bezerra, Françoise ; Duzellier, Sophie
Author_Institution
CNES, Toulouse
fYear
2005
fDate
19-23 Sept. 2005
Abstract
Taking into account current and future encapsulation techniques of COTS VLSI components, a survey of state-of-the-art sample preparation techniques for heavy ions backside irradiation has been performed and then evaluated on a SDRAM test vehicle.
Keywords
DRAM chips; VLSI; ion beam effects; SDRAM test vehicle; commercial off the shelf VLSI components; heavy ions backside irradiation; preparation techniques; Assembly; Chip scale packaging; Encapsulation; Field programmable gate arrays; Integrated circuit packaging; Ion beams; Metallization; Silicon; Testing; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on
Conference_Location
Cap d´Agde
ISSN
0379-6566
Print_ISBN
978-0-7803-9502-2
Electronic_ISBN
0379-6566
Type
conf
DOI
10.1109/RADECS.2005.4365619
Filename
4365619
Link To Document