DocumentCode :
1896040
Title :
Survey and comparison of various sample preparation techniques for the heavy ions backside irradiation of COTS VLSI
Author :
Courtade, Frédéric ; Bezerra, Françoise ; Duzellier, Sophie
Author_Institution :
CNES, Toulouse
fYear :
2005
fDate :
19-23 Sept. 2005
Abstract :
Taking into account current and future encapsulation techniques of COTS VLSI components, a survey of state-of-the-art sample preparation techniques for heavy ions backside irradiation has been performed and then evaluated on a SDRAM test vehicle.
Keywords :
DRAM chips; VLSI; ion beam effects; SDRAM test vehicle; commercial off the shelf VLSI components; heavy ions backside irradiation; preparation techniques; Assembly; Chip scale packaging; Encapsulation; Field programmable gate arrays; Integrated circuit packaging; Ion beams; Metallization; Silicon; Testing; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on
Conference_Location :
Cap d´Agde
ISSN :
0379-6566
Print_ISBN :
978-0-7803-9502-2
Electronic_ISBN :
0379-6566
Type :
conf
DOI :
10.1109/RADECS.2005.4365619
Filename :
4365619
Link To Document :
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