Title :
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 [Front Matter]
Abstract :
Presents the front cover and front matter from the conference proceedings.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; integrated circuit modelling; integrated circuit technology; large scale integration; millimetre wave amplifiers; mixed analogue-digital integrated circuits; monolithic integrated circuits; power amplifiers; semiconductor device models; FET technology; GaAs; GaAs monolithic ICs; HBT technology; LSI circuits; MM-wave amplifiers; active device modelling; automotive technology; frequency translation techniques; high integration signal processing; high performance circuits; manufacturing techniques; mixed-signal circuits; mobile technology; power amplifiers; ultra-high speed ICs;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-5049-9
DOI :
10.1109/GAAS.1998.722586
