DocumentCode :
1896085
Title :
The Modeling and Characterization of Poly-Emitter n-p-n Bipolar Transistor in Bicmos Device
Author :
Hong, G.M. ; Lin, J.Y. ; Chang, K.Z. ; Lu, S.G. ; Hwang, H.L.
fYear :
1993
fDate :
6-7 March 1993
Firstpage :
31
Lastpage :
32
Keywords :
BiCMOS integrated circuits; Bipolar transistors; Bones; Grain boundaries; Leakage current; Radiative recombination; Semiconductor films; Silicon; Thermal resistance; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-1225-2
Type :
conf
DOI :
10.1109/SMS.1993.664538
Filename :
664538
Link To Document :
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