Title :
The Oxide-Trap-Distributed Dependence of Exponent /spl gamma/ on 1/f/sup /spl gamma// Noise in Mosfets Device
Author :
Chen, H.H. ; Chen, S.L. ; Jeng Gong
Author_Institution :
Department of Electrical Engineering, National Tsing Hua University, Taiwan R.O.C.
Keywords :
1f noise; Electrons; FETs; Fluctuations; Interface states; MOSFET circuits; Noise measurement; Photonic band gap; Semiconductor device noise;
Conference_Titel :
Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-1225-2
DOI :
10.1109/SMS.1993.664542
