• DocumentCode
    1896280
  • Title

    An Analytical Threshold Voltage Model for Sige-Channel Pmos Devices

  • Author

    Kuo, J.B. ; Tang, M.C. ; Sim, J.H.

  • Author_Institution
    Dept. of Electrical Eng., National Taiwan University
  • fYear
    1993
  • fDate
    6-7 March 1993
  • Firstpage
    47
  • Lastpage
    48
  • Keywords
    Analytical models; Erbium; Germanium silicon alloys; MOS devices; Microelectronics; Photonic band gap; Poisson equations; Predictive models; Silicon germanium; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on
  • Conference_Location
    Taipei, Taiwan
  • Print_ISBN
    0-7803-1225-2
  • Type

    conf

  • DOI
    10.1109/SMS.1993.664548
  • Filename
    664548
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1896280