DocumentCode :
1896280
Title :
An Analytical Threshold Voltage Model for Sige-Channel Pmos Devices
Author :
Kuo, J.B. ; Tang, M.C. ; Sim, J.H.
Author_Institution :
Dept. of Electrical Eng., National Taiwan University
fYear :
1993
fDate :
6-7 March 1993
Firstpage :
47
Lastpage :
48
Keywords :
Analytical models; Erbium; Germanium silicon alloys; MOS devices; Microelectronics; Photonic band gap; Poisson equations; Predictive models; Silicon germanium; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-1225-2
Type :
conf
DOI :
10.1109/SMS.1993.664548
Filename :
664548
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1896280
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