DocumentCode :
1896305
Title :
Aluminum thermomigration technology for fabrication of silicon packages
Author :
Rudakov, V.I. ; Plis, N.I.
Author_Institution :
Inst. of Microelectron. & Informatics, Russian Acad. of Sci., Yaroslavl, Russia
fYear :
2005
fDate :
18-20 April 2005
Firstpage :
325
Lastpage :
329
Abstract :
This work researched the opportunity of application of aluminum thermomigration technology for fabrication of silicon packages. The thermomigration process is also called temperature gradient zone melting. The process was used for production of through-wafer interconnections. We describe both the process and the apparatus designed for making recrystallized doped regions during heating of a silicon wafer under a temperature gradient created along the wafer thickness. In addition, we also consider three types packages which would be possible to be made by aluminum thermomigration technology: ordinary silicon ball grid array (BGA) package, combined silicon BGA package and silicon-and-silicon BGA package.
Keywords :
aluminium; ball grid arrays; elemental semiconductors; heat transfer; heat treatment; semiconductor device packaging; silicon; temperature distribution; thermal management (packaging); wafer-scale integration; Al; Si; aluminum thermomigration technology; recrystallized doped region; silicon ball grid array package; silicon package fabrication; silicon wafer heating; silicon-and-silicon BGA package; temperature gradient zone melting; through-wafer interconnection; wafer thickness; Aluminum; Crystalline materials; Electronics packaging; Fabrication; Glass; Inorganic materials; Mechanical factors; Nickel; Silicon; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2005. EuroSimE 2005. Proceedings of the 6th International Conference on
Print_ISBN :
0-7803-9062-8
Type :
conf
DOI :
10.1109/ESIME.2005.1502822
Filename :
1502822
Link To Document :
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