Aluminum thermomigration technology for fabrication of silicon packages

Author

Rudakov, V.I. ; Plis, N.I.

Author_Institution

Inst. of Microelectron. & Informatics, Russian Acad. of Sci., Yaroslavl, Russia

fYear

2005

fDate

18-20 April 2005

Firstpage

325

Lastpage

329

Abstract

This work researched the opportunity of application of aluminum thermomigration technology for fabrication of silicon packages. The thermomigration process is also called temperature gradient zone melting. The process was used for production of through-wafer interconnections. We describe both the process and the apparatus designed for making recrystallized doped regions during heating of a silicon wafer under a temperature gradient created along the wafer thickness. In addition, we also consider three types packages which would be possible to be made by aluminum thermomigration technology: ordinary silicon ball grid array (BGA) package, combined silicon BGA package and silicon-and-silicon BGA package.

Keywords

aluminium; ball grid arrays; elemental semiconductors; heat transfer; heat treatment; semiconductor device packaging; silicon; temperature distribution; thermal management (packaging); wafer-scale integration; Al; Si; aluminum thermomigration technology; recrystallized doped region; silicon ball grid array package; silicon package fabrication; silicon wafer heating; silicon-and-silicon BGA package; temperature gradient zone melting; through-wafer interconnection; wafer thickness; Aluminum; Crystalline materials; Electronics packaging; Fabrication; Glass; Inorganic materials; Mechanical factors; Nickel; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2005. EuroSimE 2005. Proceedings of the 6th International Conference on

Print_ISBN

0-7803-9062-8

Type

conf

DOI

10.1109/ESIME.2005.1502822

Filename

1502822