Design and Assessment of a High Gamma-Dose Tolerant VCSEL Driver wit Discrete SiGe HBT´s

Author

Leroux, P. ; Van Uffelen, M. ; Berghmans, F. ; Giraud, A.

Author_Institution

Katholieke Hogeschool Kempen, Geel

fYear

2005

fDate

19-23 Sept. 2005

Abstract

A digital VCSEL driver has been designed, simulated and assessed under radiation, using discrete SiGe HBT´s. The circuit tolerates high levels of gamma radiation, up to 12 MGy, features less than 2% drift in the forward current of the VCSEL and operates well above 10 MHz. The output duty cycle shows no notable degradation at 200 kHz, enabling the design of robust analog and digital communication systems using pulse-width-modulation (PWM) schemes.

Keywords

Ge-Si alloys; gamma-ray effects; heterojunction bipolar transistors; surface emitting lasers; SiGe; digital communication systems; discrete SiGe HBT; high gamma-dose tolerant VCSEL driver; output duty cycle; pulse-width-modulation; Circuit simulation; Degradation; Digital communication; Driver circuits; Gamma rays; Germanium silicon alloys; Pulse width modulation; Robustness; Silicon germanium; Vertical cavity surface emitting lasers; International Experimental Thermonuclear fusion Reactor (ITER); SiGe HBT; laser driver; optical transmitter; radiation effects; vertical-cavity surface-emitting laser (VCSEL);

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on

Conference_Location

Cap d´Agde

ISSN

0379-6566

Print_ISBN

978-0-7803-9502-2

Electronic_ISBN

0379-6566

Type

conf

DOI

10.1109/RADECS.2005.4365636

Filename

4365636