DocumentCode
1896407
Title
An abnormal turn-off surge suppression concept for PT-IGBTs at high voltage operation
Author
Hotta, Kazuhiro ; Fukami, Takeshi ; Hamada, Kimimori ; Sugiyama, Takahide ; Ishiko, Masayasu
Author_Institution
Toyota Motor Corp., Japan
Volume
1
fYear
2004
fDate
20-25 June 2004
Firstpage
591
Abstract
In this paper, we investigate the turn-off surge behavior of PT-IGBTs, and in particular, abnormal increases in surge voltage appearing at high voltage conditions, which are required for a hybrid vehicle with a more powerful motor output. Simulation and experimental results showed that the abnormal surge voltage can be suppressed by increase of an extra-carrier at the interface between the n-drift and n+buffer layers, because the abnormal phenomenon resulted from depletion of the accumulated carrier during the turn-off period. This countermeasure is achieved by designing the PT-IGBT as the increase of the extra-carrier at the interface during the turn-off period. This allows reduction of the surge voltage, and thereby makes it possible to use the device for higher voltage operation over 600 V, such as in hybrid vehicle application, and consequently, to increase the motor power of the hybrid vehicle without sacrificing reliability and cost.
Keywords
hybrid electric vehicles; insulated gate bipolar transistors; power semiconductor switches; semiconductor device reliability; surge protection; 600 V; PT-IGBT; accumulated carrier; depletion layer; high voltage operation; hybrid vehicle; insulated gate bipolar transistors; n+buffer layers; n-drift layer; sacrificing reliability; surge voltage; turn-off surge suppression; Bipolar transistors; Conductivity; Costs; Energy dissipation; Insulated gate bipolar transistors; Inverters; Power electronics; Surges; Vehicles; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 2004. PESC 04. 2004 IEEE 35th Annual
ISSN
0275-9306
Print_ISBN
0-7803-8399-0
Type
conf
DOI
10.1109/PESC.2004.1355814
Filename
1355814
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