DocumentCode :
1896440
Title :
Radiation effects in VLSI Ferroelectric Random Access nonvolatile Memory
Author :
Korshunov, F.P. ; Bogatyrev, Y.V. ; Lastovskiy, S.B. ; Turtsevich, A.S. ; Shwedov, S.V. ; Belous, A.I. ; Lozitskiy, E.G. ; Kulgachev, V.I.
Author_Institution :
Sci.-Practical Mater. Res. Centre, Minsk, Belarus
fYear :
2012
fDate :
10-14 Sept. 2012
Firstpage :
791
Lastpage :
793
Abstract :
The results of experimental researches of radiation resistance of VLSI Ferroelectric Random Access nonvolatile Memory (FRAM) at influence of gamma-irradiation Co60 are submitted.
Keywords :
VLSI; ferroelectric storage; gamma-ray effects; radiation hardening (electronics); random-access storage; FRAM; VLSI ferroelectric random access nonvolatile memory; gamma-irradiation; radiation effects; Electronic mail; Ferroelectric films; Nonvolatile memory; Radiation effects; Random access memory; Resistance; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
Type :
conf
Filename :
6336193
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1896440
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