DocumentCode :
1896456
Title :
"Super" GTO\´s push the limits of thyristor physics
Author :
Temple, Vic
Author_Institution :
Silicon Power Corp., Watervliet, NY, USA
Volume :
1
fYear :
2004
fDate :
20-25 June 2004
Firstpage :
604
Abstract :
Silicon power has developed an advanced "Super"-GTO or SGTO by adapting the processes of an IC foundry to fabricate high voltage GTO\´s. Using our patented "thinPak" technology we were able to make low impedance contact to gate and cathodes at a cell repeat of 150,000 emitter islands per cm2, generating an extraordinary improvement in switching, both turn-on and turn-off, while reducing forward drop at the same time. The thinPak package lends itself to producing low cost power modules that are fully bonded (no dry interfaces), have isolated bases and require no clamps or springs to mount to a heat sink. This paper will introduce new SGTO developments including that, taken together, promise diode-like forward drops and much higher operating frequencies in MW modules that can be paralleled and stacked in series with fewer problems than presently faced with standard GTO\´s.
Keywords :
electric impedance; power semiconductor switches; semiconductor device packaging; silicon; thyristors; IC fabrication; SGTO; emitter islands; forward drop reduction; low impedance contact; silicon power; super gate turn-off devices; switching improvement; thinPak technology; thyristors; Cathodes; Costs; Foundries; Impedance; Multichip modules; Packaging; Physics; Silicon; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 2004. PESC 04. 2004 IEEE 35th Annual
ISSN :
0275-9306
Print_ISBN :
0-7803-8399-0
Type :
conf
DOI :
10.1109/PESC.2004.1355816
Filename :
1355816
Link To Document :
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