DocumentCode
1896463
Title
FEM of anodic bonding test structures
Author
Plaza, J.A. ; Gonzalez, E. ; Esteve, J.
Author_Institution
Instituto de Microelectron. de Barcelona, CNM CSIC, Barcelona, Spain
fYear
2005
fDate
18-20 April 2005
Firstpage
366
Lastpage
370
Abstract
The presented work deals with the study of the electro-mechanical phenomena during the anodic bonding process between glass and silicon. Special test structures were designed for the characterisation of the bonding. The test structures consist of a matrix of circular and rectangular cavities defined by reactive ion etching on the silicon piece with different sizes and depths. During anodic bonding the structures deform. In the cavities with lower stiffness, the surfaces of the glass and silicon get into intimate contact and bond. The larger electrostatic pressure the more stiff structures will be bonded, therefore, the bonded structures give information about the electrostatic pressure. In this manuscript different electrostatic models are studied by using finite element modeling (ANSYS). The results are fitted with experimental data to validate the best model.
Keywords
elemental semiconductors; finite element analysis; glass; semiconductor process modelling; silicon; sputter etching; wafer bonding; FEM; Si; anodic bonding process; electro-mechanical phenomena; electrostatic models; electrostatic pressure; elemental semiconductors; finite element modeling; glass; reactive ion etching; semiconductor process modelling; sputter etching; test structures; wafer bonding; Bonding processes; Electrostatics; Etching; Glass; Semiconductor device modeling; Silicon; Temperature; Testing; Voltage; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2005. EuroSimE 2005. Proceedings of the 6th International Conference on
Print_ISBN
0-7803-9062-8
Type
conf
DOI
10.1109/ESIME.2005.1502829
Filename
1502829
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