• DocumentCode
    1896463
  • Title

    FEM of anodic bonding test structures

  • Author

    Plaza, J.A. ; Gonzalez, E. ; Esteve, J.

  • Author_Institution
    Instituto de Microelectron. de Barcelona, CNM CSIC, Barcelona, Spain
  • fYear
    2005
  • fDate
    18-20 April 2005
  • Firstpage
    366
  • Lastpage
    370
  • Abstract
    The presented work deals with the study of the electro-mechanical phenomena during the anodic bonding process between glass and silicon. Special test structures were designed for the characterisation of the bonding. The test structures consist of a matrix of circular and rectangular cavities defined by reactive ion etching on the silicon piece with different sizes and depths. During anodic bonding the structures deform. In the cavities with lower stiffness, the surfaces of the glass and silicon get into intimate contact and bond. The larger electrostatic pressure the more stiff structures will be bonded, therefore, the bonded structures give information about the electrostatic pressure. In this manuscript different electrostatic models are studied by using finite element modeling (ANSYS). The results are fitted with experimental data to validate the best model.
  • Keywords
    elemental semiconductors; finite element analysis; glass; semiconductor process modelling; silicon; sputter etching; wafer bonding; FEM; Si; anodic bonding process; electro-mechanical phenomena; electrostatic models; electrostatic pressure; elemental semiconductors; finite element modeling; glass; reactive ion etching; semiconductor process modelling; sputter etching; test structures; wafer bonding; Bonding processes; Electrostatics; Etching; Glass; Semiconductor device modeling; Silicon; Temperature; Testing; Voltage; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2005. EuroSimE 2005. Proceedings of the 6th International Conference on
  • Print_ISBN
    0-7803-9062-8
  • Type

    conf

  • DOI
    10.1109/ESIME.2005.1502829
  • Filename
    1502829