Title :
Research of GaN PHEMT LNA input power endurance
Author :
Krutov, A.V. ; Rebrov, A.S.
Author_Institution :
FSUE RPC “Istok”, Fryazino, Russia
Abstract :
The results of theoretical and experimental research of power endurance of LNA on GaN transistors are presented. The measured microwave parameters are given.
Keywords :
III-V semiconductors; gallium compounds; low noise amplifiers; microwave field effect transistors; microwave power amplifiers; microwave power transistors; power HEMT; wide band gap semiconductors; GaN; PHEMT LNA input power endurance; microwave parameter measurement; Electronic mail; Gallium arsenide; Gallium nitride; Microwave circuits; PHEMTs; Robustness;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
