DocumentCode :
1896686
Title :
Crystal structure and polymorphism of dimethyl-oligothiophenes crystallized epitaxially on highly oriented PTFE thin films
Author :
Yang, Cary Y. ; Yang, Yi ; Hotta, Seiji
Author_Institution :
UNIAX Corporation
fYear :
1994
fDate :
24-29 July 1994
Firstpage :
335
Lastpage :
335
Abstract :
Summary form only given. The crystal structure of dimethyl- oligothiophenes grown by epitaxial crystallization on highly oriented PTFE thin film has been studied by transmission electron microscopy. The dimethyl-oligothiophenes crystallize principally in a monoclinic phase with common lattice parameters a,b, and /spl beta/, but different c for different numbers of thiophene rings: a=0.598nm, b=0.789nm, and /spl beta/=98/spl deg/; and c=1.866nm for tetramer, c=2.234nm for the pentamer and c=2.596nm for the hexamer. The space group is C2/m. The calculated crystallographic densities are 1.36g/cm/sup 3/, 1.39g/cm/sup 3/ and 1.40g/cm/sup 3/ for the tetramer, pentamer and hexamer respectively. Polymorphism is found, with coexistence of monoclinic and orthorhombic crystal structures. The dominant phase, however, is monoclinic. The relationship between the different phases is discussed.
Keywords :
Conductivity; Crystalline materials; Crystallization; Electronics industry; Industrial electronics; Laboratories; Organic materials; Plastics industry; Polymer films; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Science and Technology of Synthetic Metals, 1994. ICSM '94. International Conference on
Conference_Location :
Seoul, Korea
Type :
conf
DOI :
10.1109/STSM.1994.835400
Filename :
835400
Link To Document :
بازگشت