DocumentCode
1897035
Title
Determination of optical depth levels of photosensitive paramagnetic centers in wide-GaP semicoductor materials by means of microwave method
Author
Bulanyi, M.F. ; Kovalenko, A.V. ; Skuratovskaya, E.V. ; Omel´chenko, S.A.
Author_Institution
Oles Honchar Dnipropetrovsk Nat. Univ., Dnipropetrovsk, Ukraine
fYear
2012
fDate
10-14 Sept. 2012
Firstpage
843
Lastpage
844
Abstract
With the help of EPR-method the optical depth levels of photosensitive paramagnetic centers in ZnS:Al crystals had been determined.
Keywords
A-centres; II-VI semiconductors; aluminium; microwave materials processing; paramagnetic resonance; wide band gap semiconductors; zinc compounds; EPR-method; ZnS:Al; microwave method; optical depth levels; photosensitive paramagnetic centers; wide-gap semicoductor materials; Crystals; Electronic mail; Iron; Optical materials; Optical switches; Photonics;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
978-1-4673-1199-1
Type
conf
Filename
6336216
Link To Document