DocumentCode :
1897035
Title :
Determination of optical depth levels of photosensitive paramagnetic centers in wide-GaP semicoductor materials by means of microwave method
Author :
Bulanyi, M.F. ; Kovalenko, A.V. ; Skuratovskaya, E.V. ; Omel´chenko, S.A.
Author_Institution :
Oles Honchar Dnipropetrovsk Nat. Univ., Dnipropetrovsk, Ukraine
fYear :
2012
fDate :
10-14 Sept. 2012
Firstpage :
843
Lastpage :
844
Abstract :
With the help of EPR-method the optical depth levels of photosensitive paramagnetic centers in ZnS:Al crystals had been determined.
Keywords :
A-centres; II-VI semiconductors; aluminium; microwave materials processing; paramagnetic resonance; wide band gap semiconductors; zinc compounds; EPR-method; ZnS:Al; microwave method; optical depth levels; photosensitive paramagnetic centers; wide-gap semicoductor materials; Crystals; Electronic mail; Iron; Optical materials; Optical switches; Photonics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
Type :
conf
Filename :
6336216
Link To Document :
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