Title :
Effect of buried oxide charge on SOI spreading resistance profile
Author :
Karulkar, Pramod C. ; Hillard, Robert J. ; Heddleson, J.M. ; Rai-Choudhury, P. ; Abe, Takeo
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
Abstract :
The authors demonstrate the effect of the buried oxide on the spreading resistance profile (SRP) by investigating bonded SOI (silicon-on-insulator) samples exposed to X-ray radiation. The results show that the effect is a manifestation of the field effect of the buried oxide charge and can be modeled semiquantitatively
Keywords :
X-ray effects; semiconductor-insulator boundaries; SOI; X-ray radiation; bonded samples; buried oxide charge; field effect; spreading resistance profile; Annealing; Charge measurement; Current measurement; Electrical resistance measurement; MOSFETs; Semiconductor films; Silicon; Strontium; Threshold voltage; Wafer bonding;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162877
