Title :
Low current dissipation pseudomorphic MODFET MMIC power amplifier for PHS operating with a 3.5 V single voltage supply
Author :
Yokoyama, T. ; Kunihisa, T. ; Nishijima, M. ; Yamamoto, S. ; Nishitsuji, M. ; Nishii, K. ; Nakayama, M. ; Ishikawa, O.
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
Abstract :
A low current dissipation MMIC power amplifier operating with a 3.5 V single voltage supply has been developed for PHS. This MMIC utilizes a pseudomorphic double heterojunction modulation doped FET (P-MODFET) to realize single voltage operation and low operating current simultaneously. It exhibits very low operating current of 141 mA at the output power of 21.5 dBm with low adjacent channel leakage power of -56.1 dBc in the single voltage supply condition. This operating current is one of the lowest values that have been reported on the single voltage operation MMIC power amplifiers for PHS.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; cellular radio; cordless telephone systems; field effect MMIC; power amplifiers; 1.9 GHz; 141 mA; 3.5 V; MMIC power amplifier; PHS; Personal Handyphone System; UHF operation; double heterojunction MODFET; low current dissipation; low operating current; modulation doped FET; pseudomorphic MODFET; single voltage operation; single voltage supply; Epitaxial layers; FETs; HEMTs; Heterojunctions; Low voltage; MMICs; MODFETs; Operational amplifiers; Power amplifiers; Power generation;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-3504-X
DOI :
10.1109/GAAS.1996.567817
