Title :
Thermal diffusivity sensors for wide-range temperature sensing
Author :
Van Vroonhoven, Caspar ; Makinwa, Kofi
Author_Institution :
Electron. Instrum. Lab., Delft Univ. of Technol., Delft
Abstract :
This work presents a CMOS temperature sensor based on thermal diffusivity sensing. This sensor is insensitive to leakage currents, and so can reliably operate up to and beyond 150degC. Also, thermal diffusivity sensors have low intrinsic spread, which means that in many applications, they do not require trimming. A thermal diffusivity sensor and its interface circuit were realized in 0.7 mum CMOS technology. The untrimmed device-to-device spread corresponds to a temperature error of plusmn0.7degC (3sigma) from -70degC to 160degC. This operating range is a significant improvement on the state-of-the-art.
Keywords :
CMOS integrated circuits; leakage currents; temperature measurement; temperature sensors; thermal diffusivity; CMOS temperature sensor; interface circuit; leakage currents; low intrinsic spread; size 0.7 mum; thermal diffusivity sensors; untrimmed device-to-device spread; wide-range temperature sensing; Bipolar transistors; CMOS technology; Delay; Electrothermal effects; Filters; Leakage current; Silicon; Temperature distribution; Temperature sensors; Thermal sensors;
Conference_Titel :
Sensors, 2008 IEEE
Conference_Location :
Lecce
Print_ISBN :
978-1-4244-2580-8
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2008.4716553