DocumentCode
1897293
Title
A 55% efficiency 5 W PHEMT X-band MMIC high power amplifier
Author
Wang, R. ; Cole, M. ; Hou, L.D. ; Chu, P. ; Chang, C.D. ; Midford, T.A. ; Cisco, T.
Author_Institution
GaAs Operations, Hughes Aircraft Co., Torrance, CA, USA
fYear
1996
fDate
3-6 Nov. 1996
Firstpage
111
Lastpage
114
Abstract
We have developed a highly efficient two stage X-band MMIC high power amplifier. Based on an optimized PHEMT device structure and a novel design approach, the amplifier demonstrated an average power added efficiency of 55% and an output power of 5 watts. A peak efficiency of 60% at near 8.0 GHz was obtained. The average drain current is 1.4 A at 7.0 V drain voltage. This is the highest reported efficiency for a broad-band, high power amplifier at X-band frequencies.
Keywords
HEMT integrated circuits; MMIC power amplifiers; field effect MMIC; power amplifiers; wideband amplifiers; 0.25 micron; 1.4 A; 5 to 6 W; 55 to 60 percent; 7 V; 7.5 to 10.5 GHz; MMIC high power amplifier; PHEMT MMIC; SHF; X-band frequencies; broadband amplifier; power added efficiency; pseudomorphic HEMT; two stage amplifier; Aircraft; Fabrication; Gallium arsenide; High power amplifiers; MMICs; PHEMTs; Phased arrays; Power amplifiers; Power generation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location
Orlando, FL, USA
ISSN
1064-7775
Print_ISBN
0-7803-3504-X
Type
conf
DOI
10.1109/GAAS.1996.567818
Filename
567818
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