Pulse power supply using an IGBT switch stack for plasma source ion implantation

Author

Kim, J.H. ; Ryu, M.H. ; Shenderey, S. ; Kim, J.S. ; Rim, G.H. ; Jeong, G.Y.

Author_Institution

KERI, South Korea

Volume

1

fYear

2004

fDate

20-25 June 2004

Firstpage

806

Abstract

A compact pulse power supply using an IGBT switch stack for plasma source ion implantation is proposed in this study. The pulse power supply is composed of a capacitor charging part and high voltage (H/V) pulse generation part. The H/V pulse generation part uses six switching block and a step-up pulse transformer. Each switching block consists of a diode stack, an IGBT stack, and a high voltage capacitor. It can generate the pulse voltages with the following parameters: voltage: up to 60 kV, rising time: 0.5 μs, falling time: 2 μs, pulse width: up to 5 μs, pulse repetition rate: 2,000 pps. The proposed pulse power supply uses only semiconductor switches made of IGBTs with only two active drivers. Hence, the system is compact, and has long lifetime and high.

Keywords

insulated gate bipolar transistors; ion implantation; plasma sources; power capacitors; power semiconductor switches; pulse transformers; pulsed power supplies; IGBT switch; diode stack; high voltage pulse generation; plasma source ion implantation; pulse power supply; pulse repetition rate; semiconductor switches; step-up pulse transformer; voltage capacitor; Capacitors; Insulated gate bipolar transistors; Ion implantation; Plasma sources; Pulse generation; Pulse transformers; Pulsed power supplies; Semiconductor diodes; Space vector pulse width modulation; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 2004. PESC 04. 2004 IEEE 35th Annual

ISSN

0275-9306

Print_ISBN

0-7803-8399-0

Type

conf

DOI

10.1109/PESC.2004.1355852

Filename

1355852