GaAs nano-pillars for solar power absorption: Electromagnetic characterization

Author

Brockett, Timothy ; Rajagopalan, Harish ; Rahmat-Samii, Yahya

Author_Institution

Univ. of California, Los Angeles, CA, USA

fYear

2010

fDate

11-17 July 2010

Firstpage

1

Lastpage

4

Abstract

The characterization of GaAs nano-pillars in the optical frequency range was investigated using HFSS. Important parameters such as optical material properties were compiled and organized to allow accurate simulation of GaAs nano-pillars to observe total reflection in comparison to flat GaAs pn-junction. This characterization exercise was essential in providing a platform for further investigation of these nano-pillars. It is now possible to utilize these simulations to optimize the critical pillar dimensions such as pillar height, diameter, and spacing by introducing techniques such as Particle Swarm Optimization (PSO) to help improve and potentially exceed the efficiency of current GaAs solar cell technology.

Keywords

III-V semiconductors; gallium arsenide; nanostructured materials; optical constants; optical materials; optimisation; p-n junctions; reflectivity; solar cells; zinc; GaAs:Zn; HFSS simulation; critical pillar dimensions; doped gallium arsenide; electromagnetic characterization; gallium arsenide nanopillars; optical frequency range characterization; optical material properties; optimization; p-n junction; pillar diameter; pillar height; pillar spacing; reflection coefficient; solar cell technology; solar power absorption; total reflection; Arrays; Dielectrics; Gallium arsenide; Optical imaging; Optical polarization; Optical reflection;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation Society International Symposium (APSURSI), 2010 IEEE

Conference_Location

Toronto, ON

ISSN

1522-3965

Print_ISBN

978-1-4244-4967-5

Type

conf

DOI

10.1109/APS.2010.5562064

Filename

5562064