CMOS 0.18 µm standard process capacitive MEMS high-Q oscillator with ultra low-power TIA readout system

Author

Kuo, F.Y. ; Chang, C.F. ; Wen, K.A.

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2014

fDate

2-5 Nov. 2014

Firstpage

911

Lastpage

914

Abstract

This paper presents the first monolithic ultra-low power MEMS oscillator that can be manufactured in the ASIC compatible standard CMOS process and monolithically integrated with TIA circuitry. It is designed for high Q value and moderate motional impedance under strict design constraints of the standard fabrication process. A high gain ultra-low power sustaining TIA amplifier circuit is compactly integrated with the resonator structure on a single die for low-power 32 kHz clock generation. The proposed 1.69μW MEMS oscillator can be embedded in common SoC applications monolithically to provide clock sources.

Keywords

CMOS analogue integrated circuits; application specific integrated circuits; integrated circuit design; low-power electronics; microfabrication; micromechanical resonators; operational amplifiers; radiofrequency amplifiers; radiofrequency integrated circuits; radiofrequency oscillators; readout electronics; ASIC; SoC application; capacitive MEMS high-Q oscillator; frequency 32 kHz; high gain ultra-low power sustaining TIA amplifier circuit; low-power clock generation; monolithic ultralow power MEMS oscillator; motional impedance; power 1.69 muW; resonator structure; size 0.18 mum; standard CMOS process; standard fabrication process; transimpedance amplifier; ultralow-power TIA readout system; Bandwidth; CMOS integrated circuits; Clocks; Micromechanical devices; Oscillators; Standards; System-on-chip; CMOS MEMS; SoC; real time clock; silicon resonator; trans-impedance amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

SENSORS, 2014 IEEE

Conference_Location

Valencia

Type

conf

DOI

10.1109/ICSENS.2014.6985149

Filename

6985149