7 mm gate width power heterojunction FETs for Li-ion battery operated personal digital cellular phones

Author

Iwata, Naoki ; Tomita, M. ; Yamaguchi, K. ; Oikawa, H. ; Kuzuhara, K.

Author_Institution

Kansai Electron. Res. Labs., NEC Device Dev. Labs., Shiga, Japan

fYear

1996

fDate

3-6 Nov. 1996

Firstpage

119

Lastpage

122

Abstract

This paper describes 950 MHz power performance of a 7.0 mm gate width double-doped AlGaAs-InGaAs-AlGaAs heterojunction FET (HJFET) with a 0.8 /spl mu/m long WSi gate for personal digital cellular phones. The fabricated HJFET exhibited 2.3 /spl Omega/.mm on-resistance, 600 mA/mm maximum drain current, 330 mS/mm transconductance and 12.7 V gate-to-drain breakdown voltage. Operated with a drain bias of 3.4 V, the HJFET demonstrated 1.23 W (30.9 dBm) output power and 56.3% power-added efficiency with -51.5 dBc adjacent channel leakage power at 50 kHz off-center frequency.

Keywords

UHF field effect transistors; cellular radio; digital radio; gallium arsenide; junction gate field effect transistors; land mobile radio; power field effect transistors; 0.8 micron; 1.23 W; 12.7 V; 3.4 V; 330 mS/mm; 56.3 percent; 7 mm; 950 MHz; AlGaAs-InGaAs-AlGaAs; Li; Li-ion battery operated phones; UHF power performance; WSi; WSi gate; double-doped HJFET; gate-to-drain breakdown voltage; personal digital cellular phones; power heterojunction FETs; Batteries; Cellular phones; Double-gate FETs; Gallium arsenide; Heterojunctions; Laboratories; Power generation; Quadrature phase shift keying; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual

Conference_Location

Orlando, FL, USA

ISSN

1064-7775

Print_ISBN

0-7803-3504-X

Type

conf

DOI

10.1109/GAAS.1996.567821

Filename

567821