Title :
Out-of-plane electrode architecture for fused silica micro-glassblown 3-D wineglass resonators
Author :
Senkal, Doruk ; Ahamed, Mohammed J. ; Asadian, Mohammad H. ; Askari, Sina ; Shkel, Andrei M.
Author_Institution :
Microsyst. Lab., Univ. of California, Irvine, Irvine, CA, USA
Abstract :
In this paper, we report an out-of-plane electrode architecture for micro-glassblown fused silica wineglass gyroscopes. Transduction is enabled by the 3-D mode shape of the wineglass resonator, which allows one to drive and sense the wineglass modes using the out-of-plane component of the vibratory motion. The transduction architecture has been successfully demonstrated on fused silica wineglass resonators with Q-factor over 1 million, on both modes, and high frequency symmetry (Δf/f) of 132 ppm at a compact size of 7 mm diameter and center frequency of 105 kHz. Out-of-plane electrode architecture enables the use of sacrifical layers to define the capacitive gaps, which enables wafer-level integration, mitigates alignment issues and provides uniformly small gaps. 10 μm capacitive gaps have been demonstrated on a 7 mm shell, resulting in over 9 pF of active capacitance within the device. Wafer-level scalability of out-of-plane electrode architecture may enable batch-fabrication of high performance fused silica micro-glassblown wineglass gyroscopes at a significantly lower cost than their precision-machined macro-scale counterparts.
Keywords :
glass; gyroscopes; microcavities; microelectrodes; microfabrication; micromechanical resonators; microsensors; silicon compounds; transducers; 3D mode shape transduction; Q-factor; SiO2; capacitive gap; frequency 105 kHz; fused silica microglassblown 3D wineglass resonator; fused silica microglassblown wineglass gyroscope; out-of-plane electrode architecture; precision-machined macroscale counterpart; sacrifical layer; size 10 mum; size 7 mm; vibratory motion; wafer-level integration; wafer-level scalability; Electrodes; Fabrication; Glass; Micromechanical devices; Q-factor; Resonant frequency; Silicon compounds;
Conference_Titel :
SENSORS, 2014 IEEE
Conference_Location :
Valencia
DOI :
10.1109/ICSENS.2014.6985170