Insertion phase variation as a function of the voltage switching power supply of LDMSOS and GaN transistors for Radar Stability

The power transistors such as technologies LDMOS and GaN are used in radar transmitters. The pulse to pulse stability which is an important feature of radar transmitters is characterized by the level of phase and amplitude variation between successive pulses of the signals from the power transistors. This variation of phase and amplitude directly determines the detection limit of the radar, it must remain within acceptable limits to guarantee better radar accuracy.The signals from these transistors depend among other on the supply voltage of these transistors. A poor quality of the supply voltage can lead to pulse to pulse instability. In this paper, we study the drain voltage influence on the insertion phase and amplitude variation of L-band LDMOS and S-band GaN power transistors.