Title :
0.1 – 10 GHz 0.5W high efficiency single transistor GaAs pHEMT power amplifier design using load-pull simulations
Author :
Sayginer, M. ; Yazgi, Metin ; Kuntman, Hakan
Author_Institution :
Elektron. ve Haberlesme Muhendisligi Bolumu, Istanbul Teknik Univ., Maslak, Turkey
Abstract :
In this study, a linear single transistor power amplifier with 0.1 - 10 GHz, 0.5W output power at 1dB compression point (P1dB) and >;45% power added efficiency (PAE) is designed. By using a graphical load-pull approach to obtain uniform distrubution for both P1dB and PAE, it is showed that the designed amplifier has its advantage over a classical load line mathched amplifier. UMS 900mW/mm 0.25μm GaAs pHEMT technology and ADS design environment is used to fullfill overall design and simulations.
Keywords :
III-V semiconductors; UHF field effect transistors; UHF power amplifiers; gallium arsenide; microwave field effect transistors; microwave power amplifiers; power HEMT; semiconductor device models; ADS design; GaAs; GaAs pHEMT technology; compression point distrubution; frequency 0.1 GHz to 10 GHz; graphical load-pull simulation; high efficiency linear single transistor GaAs pHEMT power amplifier design; power 0.5 W; power added efficiency; size 0.25 mum; Gallium arsenide; Microwave FETs; Microwave circuits; Microwave communication; Power amplifiers;
Conference_Titel :
Signal Processing and Communications Applications (SIU), 2011 IEEE 19th Conference on
Conference_Location :
Antalya
Print_ISBN :
978-1-4577-0462-8
Electronic_ISBN :
978-1-4577-0461-1
DOI :
10.1109/SIU.2011.5929782
