Title :
Evaluation of Secco etch technique for determination of dislocation densities in SIMOX wafers
Author :
Cortesi, E. ; El-Ghor, M.K. ; Hosack, H.H. ; Allen, L.P. ; Roitman, P. ; Krause, S.J.
Author_Institution :
Spire Corp., Bedford, MA, USA
Abstract :
The authors report on an extensive study of a Secco etch process for determining dislocation densities that was performed by three different groups using nine SIMOX (separation by implanted oxygen) wafers from the same lot. The average dislocation density across the entire current data set (except transmission electron microscopy, TEM) is 2.2×106/cm2 with a standard deviation of 1.0×106/cm2. Most of the data points are in the low 106 dislocations/cm2 range, in agreement with the TEM results, and indicate good consistency of results from facility to facility
Keywords :
dislocation density; semiconductor technology; semiconductor-insulator boundaries; transmission electron microscope examination of materials; SIMOX wafers; Secco etch process; Secco etch technique; Si-SiO2; TEM results; consistency of results; dislocation density determination; interfacility consistency; Anisotropic magnetoresistance; Area measurement; Density measurement; Etching; Instruments; Manufacturing; NIST; Oxygen; Scanning electron microscopy; Transmission electron microscopy;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162885
