Title :
A thyri-magnetodiode
Author :
Jain, Kailash C.
Author_Institution :
Gen. Motors Res. Lab., Warren, MI, USA
Abstract :
The magnetic field sensitivity of p-i-n diodes fabricated in silicon-on-sapphire (SOS) depends on the establishment of a bipolar conduction region. Because of low effective lifetimes of the SOS material, τeff≈10 ns, the bipolar regime occurs at high electric fields, the junction temperature rises, and magnetosensitivity is reduced. The reproducibility of Si-Al2O 3 interfaces is also a problem. A novel two-terminal devices has been built in 5-10 Ω-cm n-type 1.0-μm-thick (100) epitaxial silicon on (1102) sapphire substrate addressing these limitations. The device model and the theory of device operation were confirmed by annealing the devices at 250°C and 450°C and measuring the magnetic field sensitivity at room temperature
Keywords :
magnetoresistance; p-i-n diodes; semiconductor device models; semiconductor epitaxial layers; semiconductor technology; semiconductor-insulator boundaries; (1102) Al2O3; -; 1 micron; 10 ns; 250 C; 450 C; 5 to 10 ohmcm; SOS; Si-Al2O3 interfaces; bipolar conduction region; device model; device operation; high electric fields; junction temperature; magnetic field sensitivity; magnetosensitivity; p-i-n diodes; reproducibility; room temperature; thyri-magnetodiode; two-terminal devices; Conducting materials; Magnetic field measurement; Magnetic fields; Magnetic materials; P-i-n diodes; Reproducibility of results; Semiconductor process modeling; Silicon; Substrates; Temperature sensors;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162896
