Title :
An investigation on the cutoff characteristics of sub-quarter-micron SOI MOSFET
Author :
Koh, Risho ; Mogami, Tohru ; Ogura, Atsushi
Author_Institution :
NEC Corp., Kanagawa, Japan
Abstract :
The influence of DIBL on the latch condition for subquarter-micron SOI (silicon-on-insulator) MOSFETs is investigated. It is found that the main effect of DIBL is lowering the minimum hole current for latch. Simulated results on device structures proposed to improve cutoff characteristics are also shown. The cutoff characteristics of an SOI MOSFET (L=0.2 μm) for which higher acceptor concentration (Na=2×1017 cm-3) SOI film and LDD (lightly doped drain) structure are adopted are shown. These design options are effective for reducing DIBL at the SOI bottom
Keywords :
insulated gate field effect transistors; semiconductor-insulator boundaries; 0.2 to 0.25 micron; DIBL; LDD structure; MOSFET; SOI; cutoff characteristics; latch condition; subquarter-micron; Analytical models; Bipolar transistors; Charge carrier processes; Electrodes; Impact ionization; MOSFET circuits; Microelectronics; National electric code; Parasitic capacitance; Voltage;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162902
