DocumentCode
1898924
Title
The design of a 200 mA oxygen implanter
Author
Guerra, M.A.
Author_Institution
Ibis Technol., Danvers, MA
fYear
1991
fDate
1-3 Oct 1991
Firstpage
154
Lastpage
155
Abstract
A very high current oxygen implanter has been developed which is estimated to have four times the throughput capacity of presently available equipment. The design permits much greater automatic control of the process than has been possible up until now. A prototype version of the machine has been constructed. The major goals of the effort to develop a new oxygen implanter were to significantly improve the quality and consistency of SIMOX (separation by implanted oxygen) material, to increase the throughput capacity, and to reduce the eventual cost of manufacturing a SIMOX wafer
Keywords
ion implantation; oxygen; semiconductor technology; semiconductor-insulator boundaries; 200 mA; SIMOX; Si-SiO2; automatic control; consistency improvement; cost reduction; goals; high current O2 implanter; prototype; quality improvement; throughput capacity; Automatic control; Contamination; Costs; Magnetic materials; Manufacturing; Oxygen; Prototypes; Pumps; Robots; Throughput;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location
Vail Valley, CO
Print_ISBN
0-7803-0184-6
Type
conf
DOI
10.1109/SOI.1991.162903
Filename
162903
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