DocumentCode
1898978
Title
Advanced GaAs and Si Integrated Circuits for Microwave Frequency Synthesis
Author
Tombs, P.N. ; Green, C.R.
Author_Institution
Plessey Research Caswell Limited, Allen Clark Research Centre, Caswell, Towcester, Northants. England.
fYear
1987
fDate
23-25 Sept. 1987
Firstpage
229
Lastpage
232
Abstract
A prototype microwave E/F band direct synthesis frequency source is described. The frequency source is housed in a small module weighing only 185 grams which contains two GaAs analogue MMICs and two ECL Si digital ICs together with low frequency and DC control circuitry. Frequency selection is achieved via a serial data link. The module has a 34% tuning bandwidth centred on 3.25 GHz and a channel spacing of 500 KHz. An output power of +10 dBm ± 1 dB is obtained over the band.
Keywords
Bandwidth; Circuit optimization; Frequency synthesizers; Gallium arsenide; Integrated circuit synthesis; MMICs; Microwave frequencies; Microwave integrated circuits; Prototypes; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-state Circuits Conference, 1987. ESSCIRC '87. 13th European
Conference_Location
Taunus-Tagungs-Zentrum, F.R. Germany
Print_ISBN
3800715341
Type
conf
Filename
5434915
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