DocumentCode :
1898978
Title :
Advanced GaAs and Si Integrated Circuits for Microwave Frequency Synthesis
Author :
Tombs, P.N. ; Green, C.R.
Author_Institution :
Plessey Research Caswell Limited, Allen Clark Research Centre, Caswell, Towcester, Northants. England.
fYear :
1987
fDate :
23-25 Sept. 1987
Firstpage :
229
Lastpage :
232
Abstract :
A prototype microwave E/F band direct synthesis frequency source is described. The frequency source is housed in a small module weighing only 185 grams which contains two GaAs analogue MMICs and two ECL Si digital ICs together with low frequency and DC control circuitry. Frequency selection is achieved via a serial data link. The module has a 34% tuning bandwidth centred on 3.25 GHz and a channel spacing of 500 KHz. An output power of +10 dBm ± 1 dB is obtained over the band.
Keywords :
Bandwidth; Circuit optimization; Frequency synthesizers; Gallium arsenide; Integrated circuit synthesis; MMICs; Microwave frequencies; Microwave integrated circuits; Prototypes; Tuning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-state Circuits Conference, 1987. ESSCIRC '87. 13th European
Conference_Location :
Taunus-Tagungs-Zentrum, F.R. Germany
Print_ISBN :
3800715341
Type :
conf
Filename :
5434915
Link To Document :
بازگشت