Title :
A neural network synapse cell in 90 nm SOS
Author :
Shimabukuro, Randy L. ; Wood, Michael E. ; Shoemaker, Patrick A.
Author_Institution :
US Naval Ocean Syst. Center, San Diego, CA, USA
Abstract :
A simple four-quadrant analog multiplier has been integrated with a pair of hot carrier injection capacitors by a common floating gate. The resulting nonvolatile analog memory cell is ideal for the implementation of the synapse function in analog artificial neural network circuits. The output curves from a synapse cell fabricated in 90 nm SOS (silicon-on-sapphire) are shown. The dependence of gate current to gate voltage for positive and negative increments, respectively, is presented. It is noted that this dependence is somewhat weaker than that observed in Fowler-Nordheim tunneling
Keywords :
MOS integrated circuits; analogue storage; multiplying circuits; neural nets; semiconductor-insulator boundaries; 90 nm; 90 nm SOS; SOS; Si-Al2O3; analog artificial neural network circuits; common floating gate; four-quadrant analog multiplier; gate current; gate voltage; hot carrier injection capacitors; neural network synapse cell; nonvolatile analog memory cell; output curves; synapse cell; synapse function; ultra thin SOS I/V curves; Artificial neural networks; Circuits; Electrons; Hot carrier injection; Intelligent networks; MOS capacitors; Neural networks; Nonvolatile memory; Silicon; Tunneling;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162907
