Title :
An intelligent-power IC fabricated by SIMOX technology
Author :
Ohno, Terukazu ; Matsumoto, Satoshi ; Izumi, Katsutoshi
Author_Institution :
NTT LSI Lab., Atsugi, Japan
Abstract :
The authors have succeeded in fabricating an IPIC/SIMOX (intelligent power IC/separation by implanted oxygen) which integrates a power UMOS (U-grooved MOSFET) and a CMOS IC on one chip. The availability of the new IPIC has been verified by evaluating its functional operation. It is noted that SIMOX technology offers great potential for fabrication of future intelligent-power LSIs. The structure and electrical characteristics of the fabricated IPIC are described
Keywords :
CMOS integrated circuits; insulated gate field effect transistors; integrated circuit technology; large scale integration; power integrated circuits; power transistors; semiconductor-insulator boundaries; CMOS IC; IPIC; SIMOX technology; Si-SiO2; U-grooved MOSFET; electrical characteristics; functional operation; intelligent-power IC; intelligent-power LSIs; power UMOS; CMOS technology; MOSFET circuits; Threshold voltage;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162908
