DocumentCode
1899010
Title
An intelligent-power IC fabricated by SIMOX technology
Author
Ohno, Terukazu ; Matsumoto, Satoshi ; Izumi, Katsutoshi
Author_Institution
NTT LSI Lab., Atsugi, Japan
fYear
1991
fDate
1-3 Oct 1991
Firstpage
164
Lastpage
165
Abstract
The authors have succeeded in fabricating an IPIC/SIMOX (intelligent power IC/separation by implanted oxygen) which integrates a power UMOS (U-grooved MOSFET) and a CMOS IC on one chip. The availability of the new IPIC has been verified by evaluating its functional operation. It is noted that SIMOX technology offers great potential for fabrication of future intelligent-power LSIs. The structure and electrical characteristics of the fabricated IPIC are described
Keywords
CMOS integrated circuits; insulated gate field effect transistors; integrated circuit technology; large scale integration; power integrated circuits; power transistors; semiconductor-insulator boundaries; CMOS IC; IPIC; SIMOX technology; Si-SiO2; U-grooved MOSFET; electrical characteristics; functional operation; intelligent-power IC; intelligent-power LSIs; power UMOS; CMOS technology; MOSFET circuits; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location
Vail Valley, CO
Print_ISBN
0-7803-0184-6
Type
conf
DOI
10.1109/SOI.1991.162908
Filename
162908
Link To Document