• DocumentCode
    1899049
  • Title

    SIMOX-devices for analog circuits

  • Author

    Badenes, G. ; Burbach, G. ; Gassel, H. ; Vogt, H.

  • Author_Institution
    Fraunhofer-Inst. of Microelectron. Circuits & Syst., Duisburg, Germany
  • fYear
    1991
  • fDate
    1-3 Oct 1991
  • Firstpage
    168
  • Lastpage
    169
  • Abstract
    It is noted that, in order to run analog circuits on SIMOX (separation by implanted oxygen), care has to be taken concerning the kink-effect, the BJT (bipolar junction transistor) breakdown, the single-transistor latch, and, for some applications, the noise of the devices. The authors report results of the different approaches to deal with these items. The demonstrator for an analog circuit is an operational amplifier, which is used as a basic element of a switch capacitor circuit. The influence of LDD (lightly doped drain) structures and low doped drift regions at the drain contact on the devices was investigated. Lateral DMOS-FETs have been examined. The device and the circuits have been tested in an elevated temperature range above 100°C
  • Keywords
    CMOS integrated circuits; insulated gate field effect transistors; linear integrated circuits; operational amplifiers; semiconductor-insulator boundaries; 100 C; CMOS; LDD; SIMOX-devices; Si-SiO2; analog circuits; elevated temperature range; kink-effect; lateral DMOS FETs; low doped drift regions; operational amplifier; single-transistor latch; switch capacitor circuit; Analog circuits; Bipolar transistor circuits; Circuit noise; Circuit testing; Electric breakdown; Latches; Operational amplifiers; Switched capacitor circuits; Switches; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1991. Proceedings, 1991., IEEE International
  • Conference_Location
    Vail Valley, CO
  • Print_ISBN
    0-7803-0184-6
  • Type

    conf

  • DOI
    10.1109/SOI.1991.162910
  • Filename
    162910