20-40 Gbit/s 0.2 /spl mu/m GaAs HEMT chip set for optical data receiver

Author

Berroth, M. ; Lang, M. ; Wang, Z.-G. ; Lao, Z. ; Thiede, A. ; Motzer, M.R. ; Bronner, W. ; Kaufel, G. ; Kohler, K. ; Hulsmann, A. ; Schneider, J.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

fYear

1996

fDate

3-6 Nov. 1996

Firstpage

133

Lastpage

136

Abstract

Using our 0.2 pm AlGaAs-GaAs-AlGaAs quantum well HEMT technology, we have designed a chip set for 20-40 Gbit/s transmission systems. In this paper we describe five chips for the receiver side. The presented results have been measured on wafer.

Keywords

HEMT integrated circuits; III-V semiconductors; data communication; data communication equipment; decision circuits; demultiplexing equipment; digital communication; field effect digital integrated circuits; frequency dividers; gallium arsenide; optical receivers; timing circuits; wideband amplifiers; 0.2 micron; 20 to 40 Gbit/s; AlGaAs-GaAs-AlGaAs; GaAs HEMT chip set; Gbit/s transmission systems; optical data receiver; quantum well HEMT technology; receiver side; Bit rate; Circuits; Clocks; Gallium arsenide; HEMTs; Optical amplifiers; Optical distortion; Optical receivers; Semiconductor device measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual

Conference_Location

Orlando, FL, USA

ISSN

1064-7775

Print_ISBN

0-7803-3504-X

Type

conf

DOI

10.1109/GAAS.1996.567826

Filename

567826