Title :
20-40 Gbit/s 0.2 /spl mu/m GaAs HEMT chip set for optical data receiver
Author :
Berroth, M. ; Lang, M. ; Wang, Z.-G. ; Lao, Z. ; Thiede, A. ; Motzer, M.R. ; Bronner, W. ; Kaufel, G. ; Kohler, K. ; Hulsmann, A. ; Schneider, J.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
Using our 0.2 pm AlGaAs-GaAs-AlGaAs quantum well HEMT technology, we have designed a chip set for 20-40 Gbit/s transmission systems. In this paper we describe five chips for the receiver side. The presented results have been measured on wafer.
Keywords :
HEMT integrated circuits; III-V semiconductors; data communication; data communication equipment; decision circuits; demultiplexing equipment; digital communication; field effect digital integrated circuits; frequency dividers; gallium arsenide; optical receivers; timing circuits; wideband amplifiers; 0.2 micron; 20 to 40 Gbit/s; AlGaAs-GaAs-AlGaAs; GaAs HEMT chip set; Gbit/s transmission systems; optical data receiver; quantum well HEMT technology; receiver side; Bit rate; Circuits; Clocks; Gallium arsenide; HEMTs; Optical amplifiers; Optical distortion; Optical receivers; Semiconductor device measurement; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-3504-X
DOI :
10.1109/GAAS.1996.567826
