Performance of 0.8 μm-SOIMOSFETs fabricated in high quality laser recrystallized SOI

Author

Ipposhi, T. ; Wouters, D.J. ; Sugahara, K. ; Inoue, Y. ; Nishimura, T. ; Akasaka, Y.

Author_Institution

Mitsubishi Electric Corp., Itami, Japan

fYear

1991

fDate

1-3 Oct 1991

Firstpage

180

Lastpage

181

Abstract

The laser-recrystallized SOI (silicon-on-insulator) method was used to fabricate 0.8-μm SOI MOSFETs in which the mesa isolation technique was used. The process finished SOI thickness and gate oxide thickness were 450 nm and 20 nm. The electrical characteristics of the MOSFETs at the position of 20 μm from seed with a gate length of 0.8 μm and a channel width of 10 μm are shown. Uniformity of the SOI MOSFET characteristics was almost the same as that of bulk MOSFETs. Results for a CMOS ring oscillator without any additional load capacitance are shown. The delay time was 117 ps/stage and supply voltage of 5 V. This indicated that the speed performance was also improved by the improved transistor characteristics and was comparable to that of the bulk Si case

Keywords

CMOS integrated circuits; insulated gate field effect transistors; integrated circuit technology; laser beam annealing; oscillators; recrystallisation annealing; semiconductor-insulator boundaries; 0.8 micron; 117 ps; 20 nm; 450 nm; 5 V; CMOS ring oscillator; MOSFETs; SOI thickness; Si-SiO₂; channel width; delay time; electrical characteristics; gate length; gate oxide thickness; laser recrystallisation; laser-recrystallized SOI; mesa isolation; speed performance; supply voltage; transistor characteristics; Circuits; Crystalline materials; Delay effects; Industrial control; Insulation; Large scale integration; MOSFETs; Research and development; Silicon on insulator technology; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1991. Proceedings, 1991., IEEE International

Conference_Location

Vail Valley, CO

Print_ISBN

0-7803-0184-6

Type

conf

DOI

10.1109/SOI.1991.162916

Filename

162916