Title :
CVD barriers for Cu with nanoporous ultra low-k: integration and reliability
Author :
Lin, J.C. ; Augur, R. ; Shue, S.L. ; Yu, C.H. ; Liang, M.S. ; Vijayendran, A. ; de Felipe, T.Suwwan ; Danek, M.
Author_Institution :
Int. Sematech, Austin, TX, USA
Abstract :
The drive for greater integrated circuit performance has led to the need for faster interconnect systems, the development of porous ultra low-k dielectrics and thin CVD barriers. The porous structure and lower modulus of low-k dielectrics has made integration a greater challenge. In this paper, we report on an initial feasibility study on of a new spin-on nanoporous low-k dielectric with a CVD TiN(Si) barrier, for Cu dual damascene integration.
Keywords :
CVD coatings; copper; dielectric thin films; diffusion barriers; integrated circuit interconnections; integrated circuit reliability; leakage currents; nanostructured materials; organic compounds; porous materials; spin coating; titanium compounds; CVD barriers; Cu dual damascene integration; Cu interconnect systems; TiN:Si-Cu; TiN:Si/Cu stack; leakage current; nanoporous ultra low-k dielectrics; porous structure; reliability; siloxane based material; spin-on nanoporous low-k dielectric; Atherosclerosis; Chemical technology; Copper; Current measurement; Dielectric materials; Integrated circuit interconnections; Integrated circuit technology; Leakage current; Nanoporous materials; Tin;
Conference_Titel :
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN :
0-7803-7216-6
DOI :
10.1109/IITC.2002.1014875
