DocumentCode
1899402
Title
Integration damage in organosilicate glass films
Author
Ryan, E. Todd ; Martin, Jeremy ; Junker, Kurt ; Lee, J.J. ; Guenther, T. ; Wetzel, Jeff ; Lin, Simon ; Gidley, David W. ; Sun, Jianing
Author_Institution
Adv. Micro Devices, AMD/Motorola Alliance, Austin, TX, USA
fYear
2002
fDate
2002
Firstpage
27
Lastpage
29
Abstract
This study compares integration damage (ID) to two non-mesoporous organosilicate glass (OSG) films and several mesoporous OSG films with completely connected pores. The results show that the mesoporous OSG films are more susceptible to integration damage than are the non-mesoporous films.
Keywords
dielectric thin films; glass; integrated circuit interconnections; organic compounds; porous materials; integration damage; interconnect technology; low-k interlayer dielectric material; mesoporous film; nonmesoporous film; organosilicate glass film; Bonding; Dielectric constant; Dielectric materials; Glass; Mesoporous materials; Plasma applications; Plasma chemistry; Plasma density; Plasma materials processing; Skin;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN
0-7803-7216-6
Type
conf
DOI
10.1109/IITC.2002.1014876
Filename
1014876
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