Title :
Switched current circuit design techniques for single-bit, high speed sigma-delta modulators
Author :
Toumazou, C. ; Saether, G. ; Adams, M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll., London, UK
Abstract :
This paper reviews some research aimed at developing suitable circuit techniques to implement high speed ΣΔ modulators on a pure digital process technology. Techniques are presented in both Si and GaAs technologies, and in both instances performance is optimised for speed. Simulations presented for the Si circuits employ MOSFETs from the 0.8 μm Northern Telecom BiCMOS technology
Keywords :
BiCMOS integrated circuits; analogue-digital conversion; delta modulation; integrated circuit technology; modulators; 0.8 micron; BiCMOS technology; GaAs; Si; digital process technology; high speed sigma-delta modulators; performance; switched current circuit design;
Conference_Titel :
Oversampling Techniques and Sigma-Delta Modulation, IEE Colloquium on
Conference_Location :
London
