Integration of SiCN as a low κ etch stop and Cu passivation in a high performance Cu/low κ interconnect

Author

Martin, Jeremy ; Filipiak, Stan ; Stephens, Tab ; Huang, Fred ; Aminpur, Massud ; Mueller, Judith ; Demircan, Ertugrul ; Zhao, Larry ; Werking, Jim ; Goldberg, Cindy ; Park, Steve ; Sparks, Terry ; Esber, Christine

Author_Institution

Adv. Micro Devices, AMD/Motorola Alliance, Austin, TX, USA

fYear

2002

fDate

2002

Firstpage

42

Lastpage

44

Abstract

This paper describes the integration of a silicon carbon nitride (SiCN) copper passivation and etch stop layer into a Cu low k dielectric interconnect technology. The incorporation of SiCN improves interconnect performance by virtue of its lower dielectric constant as compared to silicon nitride, and through changes to the process integration made possible by the improved etch selectivity and good copper interface properties.

Keywords

copper; dielectric thin films; integrated circuit interconnections; passivation; permittivity; Cu-SiCN; Cu/low κ interconnect; copper interface properties; dielectric constant; etch selectivity; interconnect performance; interconnect technology; low κ etch stop; process integration; Capacitance; Copper; Delay effects; Dielectric constant; Dielectric materials; Etching; Inorganic materials; Integrated circuit interconnections; Passivation; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International

Print_ISBN

0-7803-7216-6

Type

conf

DOI

10.1109/IITC.2002.1014881

Filename

1014881