Title :
Integration of SiCN as a low κ etch stop and Cu passivation in a high performance Cu/low κ interconnect
Author :
Martin, Jeremy ; Filipiak, Stan ; Stephens, Tab ; Huang, Fred ; Aminpur, Massud ; Mueller, Judith ; Demircan, Ertugrul ; Zhao, Larry ; Werking, Jim ; Goldberg, Cindy ; Park, Steve ; Sparks, Terry ; Esber, Christine
Author_Institution :
Adv. Micro Devices, AMD/Motorola Alliance, Austin, TX, USA
Abstract :
This paper describes the integration of a silicon carbon nitride (SiCN) copper passivation and etch stop layer into a Cu low k dielectric interconnect technology. The incorporation of SiCN improves interconnect performance by virtue of its lower dielectric constant as compared to silicon nitride, and through changes to the process integration made possible by the improved etch selectivity and good copper interface properties.
Keywords :
copper; dielectric thin films; integrated circuit interconnections; passivation; permittivity; Cu-SiCN; Cu/low κ interconnect; copper interface properties; dielectric constant; etch selectivity; interconnect performance; interconnect technology; low κ etch stop; process integration; Capacitance; Copper; Delay effects; Dielectric constant; Dielectric materials; Etching; Inorganic materials; Integrated circuit interconnections; Passivation; Silicon compounds;
Conference_Titel :
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN :
0-7803-7216-6
DOI :
10.1109/IITC.2002.1014881
