Title :
Dual damascene patterning for full spin-on stack of porous low-K material
Author :
Furukawa, Y. ; Kokubo, T. ; Struy, H. ; Maenhoudt, M. ; Vanhaelemeersch, S. ; Gravesteijn, D.
Author_Institution :
Philips Res., Leuven, Belgium
Abstract :
In this article the dual damascene (DD) patterning has been examined for a full spin-on stack of a low-K material in K-value of 2.2 generation, i.e. LKD-5109 with dual low-K spin-on hard masks (SoHM). Compared to conventional CVD-deposited dual hard masks (dHM), the top spin-on HM has a wider range of thickness for which standing waves in the resist can be prevented. Furthermore, an etch selectivity has been obtained of more than 30 for LKD-5109 towards organic SoHM using fluorocarbon chemistries. Through the design of dHM structure and etch process development, it was possible to reduce the number of steps using an in-situ resist ash and organic SoHM strip during etching. A DD 0.2 μm trench/via structure was successfully etched.
Keywords :
dielectric thin films; etching; integrated circuit interconnections; masks; porous materials; spin coating; 0.2 micron; LKD-5109; dHM structure; dual damascene patterning; dual low-K spin-on hard masks; etch process development; etch selectivity; fluorocarbon chemistries; full spin-on stack; in-situ resist ash; organic SoHM strip; porous low-K material; trench/via structure; Chemistry; Dielectric constant; Dielectric materials; Dielectric substrates; Etching; Organic materials; Reflectivity; Resists; Silicon carbide; Wavelength measurement;
Conference_Titel :
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN :
0-7803-7216-6
DOI :
10.1109/IITC.2002.1014882
