Title :
Cu/LKD-5109 damascene integration demonstration using FF-02 low-k spin-on hard-mask and embedded etch-stop
Author :
Kokubo, T. ; Das, A. ; Furukawa, Y. ; Vos, I. ; Iacopi, F. ; Struyf, H. ; Aelst, J.V. ; Maenhoudt, M. ; Tokei, Z. ; Vervoort, I. ; Bender, H. ; Stucchi, M. ; Schaekers, M. ; Boullart, W. ; Van Hove, M. ; Vanhaelemeersch, S. ; Peterson, W. ; Shiota, A. ; M
Author_Institution :
IMEC, JSR Corp., Tsukuba, Japan
Abstract :
The feasibility of integrating low-k spin-on dielectrics into a Cu damascene structure using JSR´s LKD-5109 (k = 2.2) has been investigated. The chemical vapor deposited embedded etch-stop (ES) and dual hard-mask (HM) are replaced by JSR´s spin-on dielectrics (organic FF-02 and MSQ type LKD-2022). In this study, the capability of FF-02 as an ES and as a chemical mechanical polishing (CMP) stop has been verified. In addition to electrical and mechanical film properties of FF-02, the chemical compatibility and removal rate to CMP slurries are investigated. Finally, the first successful single damascene (SD) integration with spin-on dual HM and ES is demonstrated and its electrical results including Raphael´s model simulation of the k-value are reported.
Keywords :
chemical mechanical polishing; copper; dielectric thin films; integrated circuit interconnections; masks; organic compounds; permittivity; spin coating; CMP slurry removal rate; Cu; Cu damascene structure; Cu/LKD-5109 damascene integration; FF-02 low-k spin-on hard-mask; MSQ type LKD-2022; Raphael model simulation; chemical compatibility; chemical mechanical polishing stop; electrical film properties; embedded etch-stop; k-value; low-k spin-on dielectrics; mechanical film properties; single damascene integration; spin-on dielectrics; Capacitance; Capacitors; Chemicals; Chemistry; Damascene integration; Dielectric materials; Dielectric measurements; Etching; Mechanical factors; Slurries;
Conference_Titel :
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN :
0-7803-7216-6
DOI :
10.1109/IITC.2002.1014884
