Title :
Cohesive strength characterization of brittle low-k films
Author :
Guanghai Xu ; Andideh, E. ; Bielefeld, J. ; Scherban, T.
Author_Institution :
Logic Technol. Dev., Intel Corp., Hillsboro, OR
Abstract :
The cohesive strength of low k dielectric films is an important property in predicting thermomechanical integrity of the Cu/low k interconnect structure. An approach to measure the cohesive strength of brittle low k films is presented, in which residual stress, elastic modulus and film thickness, are considered. The importance of residual film stress in cohesive failures is demonstrated.
Keywords :
brittleness; cracks; dielectric thin films; elastic moduli; fracture toughness; integrated circuit interconnections; integrated circuit reliability; internal stresses; Cu/low k interconnect structure; brittle low k dielectric films; channel cracking technique; cohesive failures; cohesive strength; crack propagation velocity; elastic modulus; film thickness; fracture toughness; reliability; residual stress; thermomechanical integrity; Adhesives; Dielectric measurements; Mechanical factors; Optical films; Residual stresses; Substrates; Tensile stress; Testing; Thermal stresses; Transistors;
Conference_Titel :
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN :
0-7803-7216-6
DOI :
10.1109/IITC.2002.1014886
