Development of 300 mm low-k dielectric for 0.13 μm BEOL damascene process

This paper discusses the development of 300 mm CVD low-k dielectric for the 0.13 μm technology Cu/low-k integration. A carbon doped oxide SiOC low-k dielectric was deposited in a 300 mm plasma enhanced CVD chamber using methylsilane-based precursor as the main source gas and other co-reactant gases. The blanket as-deposited film has a dielectric constant of ≤ 3 to integrate with a SiC etching stop layer with dielectric constant of ≤ 5. Excellent stack film thermal stability and adhesion for the Cu CMP process leads to a successful integration of 300 mm Cu/low-k backend process.