Improved Cu abrasive-free polishing at 0.13 μm manufacturing and beyond

Author

Yamada, Youhei ; Konishi, Naoki ; Ohashi, Naofumi ; Kimura, Takeshi

Author_Institution

Device Dev. Center, Hitachi Ltd., Tokyo, Japan

fYear

2002

fDate

2002

Firstpage

108

Lastpage

110

Abstract

Abrasive free polishing (AFP) for 0.13 μm node copper damascene interconnects was improved. A CMP process using a modified groove pad design to provide optimized polishing friction force can reduce a metal loss of 20% on Cu wiring, compared to the conventional AFP process. We demonstrated meeting the planarity target for a 0.1 μm technology node without extra intermediate oxide polishes.

Keywords

chemical mechanical polishing; copper; friction; integrated circuit interconnections; integrated circuit manufacture; integrated circuit measurement; integrated circuit metallisation; nanotechnology; surface topography; 0.1 micron; 0.13 micron; AFP; Cu; Cu abrasive-free CMP; Cu wiring metal loss reduction; IC manufacturing technology; abrasive-free polishing; chemical mechanical polishing; copper damascene interconnects; intermediate oxide polishes; modified groove pad design; nanotechnology; optimized polishing friction force; planarity target; Abrasives; Chemicals; Copper; Friction; Manufacturing; Metallization; Page description languages; Slurries; Thickness measurement; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International

Print_ISBN

0-7803-7216-6

Type

conf

DOI

10.1109/IITC.2002.1014904

Filename

1014904